2SC3893A - Inchange Semiconductor

2SC3893A Silicon NPN Power Transistor

·High Breakdown Voltage- ：VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltag.

Features

0mA; IC= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.5A VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.5A ICBO Collector Cutoff Current VCB= 500V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 1A; VCE= 5V VECF C-E Diode Forward Voltage IF= 6A fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V COB Output Capacitance IE= 0; VCB= 10V; ftest=1.0MHz Switching Times , Resistive load tstg Storage Time tf Fall Time ICP= 6A, IB1= 1.2A; IB2= -2.4A; RL= 33.3Ω MIN T.