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·High Breakdown Voltage- ：VCBO= 1400V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltag.
A; IC= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.5A VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.5A ICBO Collector Cutoff Current VCB= 500V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 1A; VCE= 5V VECF C-E Diode Forward Voltage IF= 6A fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V COB Output Capacitance IE= 0; VCB= 10V; ftest=1.0MHz Switching Times , Resistive load tstg Storage Time tf Fall Time ICP= 6A, IB1= 1.2A; IB2= -2.4A; RL= 33.3Ω MIN TY.
2SC3893 - SavantIC
·With TO-3P(H)IS package ·Built-in damper diode ·High voltage ,high speed APPLICATIONS ·Horizontal deflection output for.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3890 |
Sanken electric |
Silicon NPN Transistor |
|
| 2 | 2SC3890 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SC3890 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SC3892 |
INCHANGE |
NPN Transistor |
|
| 5 | 2SC3892 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SC3892A |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SC3893A |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 8 | 2SC3894 |
Sanyo Semicon Device |
NPN Transistor |
|
| 9 | 2SC3894 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SC3894 |
INCHANGE |
NPN Transistor |
|
| 11 | 2SC3895 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 12 | 2SC3895 |
SavantIC |
SILICON POWER TRANSISTOR |
|