2SC3833 - INCHANGE

2SC3833 NPN Transistor

·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Vo.

Features

C= 25mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1.4A VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 1.4A ICBO Collector Cutoff Current VCB= 500V ; IE= 0 IEBO Emitter Cutoff Current VEB= 10V; IC= 0 hFE DC Current Gain IC= 7A ; VCE= 4V COB Output Capacitance IE= 0 ; VCB= 10V; ftest= 1.0MHz fT Current-Gain—Bandwidth Product IE= -1A ; VCE= 12V Switching Times ton Turn-on Time tstg Storage Time tf Fall Time IC= 7A,IB1= 0.7A; IB2= -1.4A RL= 28.5Ω; VCC= 200V MIN TYP. MAX UNIT 400 V 0.5 V 1.3 V 0.1 mA 0.1 mA 10 30 105 pF 10 MHz .