2SC3830 - Sanken electric

2SC3830 Silicon NPN Transistor

2SC3830 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3830 600 500 10 6(Pulse12) 2 50(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose sElectrical Characteristics Symbol ICBO I.

Features

C
  – V CE Characteristics (Typical) 6 1A 80 0m A V CE (sat),V BE (sat)
  – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t) (V ) Base-Emitter Saturation Voltage V B E (sa t) (V ) (I C /I B =5) 2 I C
  – V BE Temperature Characteristics (Typical) 6 (V CE =4V) 5 Collector Current I C (A) 60 0m A 5 Collector Current I C (A) 4 400 mA 4 300mA 3 V B E (sat) 1 p)
  –55˚C (Case Tem Temp) ase Tem p) 3 mp 200mA 2 I B =100mA emp se T 2 (Ca (Ca 25˚C 12 V C E (sat) 0 0.02 0.05 0.1 0.5 1
  –5 5˚ C 0 0 1 2 3 4 5 0 0 0.2 0.4 125 1 5˚ C 1 .