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·With TO-220F package ·High breakdown voltage ·Fast switching speed ·Low collector saturation voltage APPLICATIONS ·For high voltalge ,high-speed switching applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220F) and symbol Emitter DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base volt.
ration voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A , L=25mH IC=3A; IB=0.6A IC=3A ;IB=0.6A VCB=800V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=3A ; VCE=5V IC=0.5A ; VCE=10V 15 8 MIN 600 2SC3795B SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V 1.0 1.5 100 100 V V µA µA 8 MHz 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3795B Fig.2 Outline dimensions 3 .
2SC3795B - INCHANGE
·Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min.) ·Low Collector Saturation Voltage ·High Speed Switching ·Mini.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3795 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SC3795 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SC3795 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SC3795A |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SC3795A |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SC3790 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 7 | 2SC3790 |
Inchange Semiconductor |
Silicon NPN Transistor |
|
| 8 | 2SC3790 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 9 | 2SC3792 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 10 | 2SC3793 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 11 | 2SC3793 |
Inchange Semiconductor |
Silicon NPN Transistor |
|
| 12 | 2SC3794 |
INCHANGE |
NPN Transistor |
|