·With TO-220Fa package ·High breakdown voltage ·High speed switching ·Low collector saturation voltage APPLICATIONS ·For high breakdown voltate ,high-speed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter 2SC3795 2SC3795A Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IC.
-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency 2SC3795 2SC3795A CONDITIONS IC=0.2A , L=25mH IC=3A; IB=0.6A IC=3A ;IB=0.6A VCB=800V; IE=0 SYMBOL VCEO(SUS) VCEsat VBEsat 2SC3795 2SC3795A MIN 500 TYP. MAX UNIT V 1.0 1.5 V V ICBO 0.1 VCB=900V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=3A ; VCE=5V IC=0.5A ; VCE=10V 15 8 8 0.1 mA IEBO hFE-1 hFE-2 fT mA MHz Switching times 2SC3795 ton Turn-on time 2SC3795A ts Storage time 2SC3795 tf Fall ti.
Power Transistors 2SC3795, 2SC3795A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed sw.
·Collector-Base Breakdown Voltage- : V(BR)CBO= 800V(Min.) ·Low Collector Saturation Voltage ·High Speed Switching ·Minim.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC3790 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
2 | 2SC3790 |
Inchange Semiconductor |
Silicon NPN Transistor | |
3 | 2SC3790 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
4 | 2SC3792 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor | |
5 | 2SC3793 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
6 | 2SC3793 |
Inchange Semiconductor |
Silicon NPN Transistor | |
7 | 2SC3794 |
INCHANGE |
NPN Transistor | |
8 | 2SC3794 |
SavantIC |
SILICON POWER TRANSISTOR | |
9 | 2SC3794A |
SavantIC |
SILICON POWER TRANSISTOR | |
10 | 2SC3795A |
Panasonic Semiconductor |
Silicon NPN Transistor | |
11 | 2SC3795A |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | 2SC3795B |
SavantIC |
SILICON POWER TRANSISTOR |