2SC3729 - Inchange Semiconductor

2SC3729 Power Transistor

·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCE.

Features

; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.25A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.25A ICES Collector Cutoff Current VCE= 1500V; RBE= 0 hFE DC Current Gain IC= 1A; VCE= 5V 2SC3729 MIN TYP. MAX UNIT 800 V 6 V 2.0 V 1.5 V 0.5 mA 8 Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are n.