2SC3692 Silicon NPN Power Transistors Datasheet

2SC3692 Silicon NPN Power Transistors

·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 6A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed and power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collec.

Features

CEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.2A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB= 0.3A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 4A; IB= 0.2A VBE(sat)-2 Base-Emitter Saturation Voltage IC= 6A; IB= 0.3A ICBO Collector Cutoff Current ICEX Collector Cutoff Current IEBO Emitter Cutoff Current VCB= 60V; IE= 0 VCE= 60V; VBE= -1.5V Ta=125℃ VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.7A; VCE= 2V hFE-2 DC Current Gain IC= 1.5A; VCE= 2V hFE-3 DC Current Gain IC= 4A; VCE= 2V.

The same part from a different manufacturer

2SC3692 - SavantiIC

·With TO-220Fa package ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·For use in drivers such as .

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