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·With TO-220Fa package ·Large current ,high speed ·Low saturation voltage APPLICATIONS ·Designed for high speed and power switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector curren.
e-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=3A; IB=0.3A,L=1mH IC=3A; IB=0.15 A IC=4A; IB=0.2A IC=3A; IB=0.15 A IC=4A; IB=0.2A VCB=60V; IE=0 VCE=60V; VBE=-1.5V Ta=125 VEB=5V; IC=0 IC=0.5A ; VCE=2V IC=1A ; VCE=2V IC=3A ; VCE=2V IE=0; VCB=10V;f=1MHz IC=0.5A ; VCE=10V 100 100 60 70 150 pF MHz 200 400 MIN 60 0.3 0.5 1.2 1.5 10 10 1.0 10 TYP. MAX UNIT V V V V V µA µA mA µA SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 .
2SC3691 - Inchange Semiconductor
·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3690 |
Inchange Semiconductor |
Power Transistor |
|
| 2 | 2SC3692 |
SavantiIC |
Silicon NPN Transistors |
|
| 3 | 2SC3692 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 4 | 2SC3693 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SC3693 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 6 | 2SC3694 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SC3694 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 8 | 2SC3600 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 9 | 2SC3601 |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 10 | 2SC3603 |
NEC |
NPN EPITAXIAL SILICON TRANSISTOR |
|
| 11 | 2SC3604 |
NEC |
NPN EPITAXIAL SILICON TRANSISTOR |
|
| 12 | 2SC3604 |
New Jersey Semi-Conductor |
NPN EPITAXIAL SILICON TRANSISTOR |
|