·High Breakdown Voltage- : VCES= 1500V (Min) ·Built-in Damper Didoe ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V .
age IC= 5A; IB= 1.25A 1.5 V ICBO Collector Cutoff Current VCE= 1200V; IE= 0 0.5 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 500 mA VECF C-E Diode Forward Voltage IF= 6A 2.0 V tf Fall Time IC= 5A, IB1= 1A, IB2= -2.5A, LB= 0 0.5 μs NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which req.
·With TO-3 package ·High voltage ,high speed ·Built-in damper diode APPLICATIONS ·For color TV horizontal deflection out.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC3650 |
GME |
General-Purpose Amplifier | |
2 | 2SC3650 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor | |
3 | 2SC3650 |
Kexin |
Transistor | |
4 | 2SC3650 |
SeCoS |
NPN Silicon Epitaxial Planar Transistor | |
5 | 2SC3650 |
Jin Yu Semiconductor |
Transistor | |
6 | 2SC3650 |
WEJ |
NPN Transistor | |
7 | 2SC3651 |
Sanyo Semicon Device |
NPN Transistor | |
8 | 2SC3651 |
Kexin |
Transistor | |
9 | 2SC3652 |
Hitachi Semiconductor |
SILICON NPN EPITAXIAL TRANSISTOR | |
10 | 2SC3653 |
Sanyo |
PNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS | |
11 | 2SC3654 |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors | |
12 | 2SC3656 |
Sanyo |
PNP/NPN Silicon Transistor |