2SC3658 Inchange Semiconductor Silicon NPN Power Transistors Datasheet, en stock, prix

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2SC3658

Inchange Semiconductor
2SC3658
2SC3658 2SC3658
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Part Number 2SC3658
Manufacturer Inchange Semiconductor
Description ·High Breakdown Voltage- : VCES= 1500V (Min) ·Built-in Damper Didoe ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed f...
Features age IC= 5A; IB= 1.25A 1.5 V ICBO Collector Cutoff Current VCE= 1200V; IE= 0 0.5 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 500 mA VECF C-E Diode Forward Voltage IF= 6A 2.0 V tf Fall Time IC= 5A, IB1= 1A, IB2= -2.5A, LB= 0 0.5 μs NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which req...

Document Datasheet 2SC3658 Data Sheet
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