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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO.
)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.8A; IB= 0.16A VBE(sat) Base-Emitter Saturation Voltage IC= 0.8A; IB= 0.16A ICBO Collector Cutoff Current VCB= 800V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE DC Current Gain IC= 0.8A; VCE= 5V Switching times tr Rise Time tstg Storage Time tf Fall Time IB1= 0.08A; IB2= -0.2A RL= 500Ω; VCC≈400V PW=20μs;Duty Cycle≤1% 2SC3559 MIN TYP. MAX UNIT 800 V 900 V 0.6 V 1.2 V 100 μA 1 mA 10 1.0 μ.
2SC3559 - SavantIC
·With TO-220Fa package ·High breakdown voltage ·High speed switching APPLICATIONS ·Switching regulator and high voltage .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3550 |
Inchange Semiconductor |
Power Transistor |
|
| 2 | 2SC3551 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SC3551 |
Fuji Electric |
Transistor |
|
| 4 | 2SC3551 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SC3552 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 6 | 2SC3552 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 7 | 2SC3553 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 8 | 2SC3554 |
NEC |
NPN Silicon Transistor |
|
| 9 | 2SC3557 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SC3557 |
INCHANGE |
NPN Transistor |
|
| 11 | 2SC3500 |
ETC |
Silicon Power Transistor |
|
| 12 | 2SC3501 |
ETC |
Silicon Power Transistor |
|