2SC3553 - Hitachi Semiconductor

2SC3553 Silicon NPN Transistor

2SC3553 Silicon NPN Epitaxial Application Low frequency amplifier Outline SPAK 1 23 1. Emitter 2. Collector 3. Base 2SC3553 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO .

Features

00 mA
*2 I C = 150 mA, IB = 15 mA
*2 VCE = 3 V, IC = 10 mA V V Notes: 1. The 2SC3553 is grouped by h FE1 as follows. 2. Pulse test B 60 to 120 C 100 to 200 D 160 to 320 See characteristic curves of 2SC1213. 2 2SC3553 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 300 200 100 0 50 100 150 Ambient Temperature Ta (°C) 3 4.2 Max 1.8 Max 3.2 Max 2.2 Max Unit: mm 0.45 ± 0.1 14.5 Min 0.6 0.6 Max 0.4 ± 0.1 1.27 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) SPAK — — 0.10 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights o.