2SC3474 - Toshiba Semiconductor

2SC3474 Silicon NPN Epitaxial Type TRANSISTOR

2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Switching Applications Solenoid Drive Applications Industrial Applications Unit: mm · High DC current gain: hFE = 500 (min) (IC = 400 mA) · Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter vol.

Features

ansition frequency Collector output capacitance Symbol Test Condition ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat) fT Cob VCB = 80 V, IE = 0 VEB = 7 V, IC = 0 IC = 10 mA, IB = 0 VCE = 1 V, IC = 400 mA IC = 300 mA, IB = 1 mA IC = 300 mA, IB = 1 mA VCE = 2 V, IC = 100 mA VCB = 10 V, IE = 0, f = 1 MHz Min Typ. Max Unit ― ― 1 µA ― ― 1 µA 80 ― ― V 500 ― ― ― 0.3 0.5 V ― ― 1.1 V ― 85 ― MHz ― 50 ― pF Turn-on time Switching time Storage time Fall time ton 20 µs IB1 OUTPUT ― 2 ― INPUT IB1 100 Ω tstg IB2 IB2 ― 5 ― µs VCC = 30 V tf IB1 = −IB2 = 1 mA, DUTY CYCLE ≤ 1% ―2― Marking .