2SC3470 - Hitachi Semiconductor

2SC3470 Silicon NPN Epitaxial Transistor

2SC3470 Silicon NPN Epitaxial Application Low frequency amplifier Outline SPAK 1 23 1. Emitter 2. Collector 3. Base 2SC3470 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO .

Features

it V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 18 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA V V MHz pF VCE = 12 V, IC = 2 mA I C = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA VCB = 10 V, IE = 0, f = 1 MHz 1. The 2SC3470 is grouped by h FE as follows. See characteristic curves of 2SC1345. 2 2SC3470 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 300 200 100 0 50 100 Ambient Temperature Ta (°C) 150 3 4.2 Max 1.8 Max 3.2 Max 2.2 Max Unit: mm 0.45 ± 0.1 14.5 Min 0.6 0.6 Max 0.4 ± 0.1 1.27 1.27 2.54 .