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2SC3376 - INCHANGE
· ·Collector-Emiiter Breakdown Voltage- : V(BR)CEO= 800V(Min.) ·High Speed Switching ·Minimum Lot-to-Lot variations.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3371 |
Inchange Semiconductor |
Power Transistor |
|
| 2 | 2SC33725 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 3 | 2SC3374 |
Hitachi Semiconductor |
NPN Transistor |
|
| 4 | 2SC3377 |
Rohm |
Epitaxial Planar NPN Silicon Transistor |
|
| 5 | 2SC3378 |
Toshiba |
Transistoe |
|
| 6 | 2SC3379 |
Mitsubishi Electric Semiconductor |
NPN TRANSISTOR |
|
| 7 | 2SC3300 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SC3300 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SC3301 |
Toshiba |
Silicon NPN Transistor |
|
| 10 | 2SC3302 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 11 | 2SC3303 |
SeCoS |
NPN Epitaxial Planar Silicon Transistor |
|
| 12 | 2SC3303 |
Toshiba Semiconductor |
SILICON NPN TRANSISTOR |
|