2SC3371 - Inchange Semiconductor

2SC3371 Power Transistor

· ·Collector-Emiiter Sustaining Voltage- : VCEO(SUS)= 500V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 8A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VAL.

Features

r Sustaining Voltage IC= 0.5A; L= 25mH VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 1.6A ICBO Collector Cutoff Current VCB= 800V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.1A; VCE= 5V hFE-2 DC Current Gain IC= 8A; VCE= 5V Switching Times; Resistive Load ton Turn-on Time ts Storage Time tf Fall Time IC= 8A; IB1= -IB2= 1.6A; VCC= 200V 2SC3371 MIN TYP. MAX UNIT 500 V 1.0 V 1.5 V 0.1 mA 0.1 mA 15 10 1.0 μs 3.0 μs 1.0 μs Notice： ISC reserves the rights to ma.