2SC3284 - INCHANGE

2SC3284 NPN Transistor

·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 150V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1303 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage .

Features

Saturation Voltage IC= 5A; IB= 0.5A ICBO Collector Cutoff Current VCB= 150V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 5A ; VCE= 4V COB Output Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz fT Current-Gain—Bandwidth Product IE= -2A ; VCE= 12V Switching Times ton Turn-on Time tstg Storage Time tf Fall Time IC= 5A ,RL= 12Ω, IB1= -IB2= 0.5A,VCC= 60V MIN TYP. MAX UNIT 150 V 2.0 V 100 μA 100 μA 50 180 200 pF 25 MHz 0.2 μs 1.5 μs 0.35 μs  hFE Classifications O P Y 50-100 70-140 90-180 Notice： ISC reserves the rights to make c.