: 2SC3280 SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES . Complementary to 2SA1301 . Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. Unit in mm 20.5MAX. 03.3±O.2 3^ MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current.
. Complementary to 2SA1301 . Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. Unit in mm 20.5MAX. 03.3±O.2 3^ MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL v CBO VCEO v EBO ic IB PC T j Tstg RATING 160 160 5 12 1.2 120 150 -55^150 UNIT V V V A A 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER W TOSHIBA °C 2-21F1A Weight : 9.75g °c ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERI.
·With TO-3PL package ·Complement to type 2SA1301 APPLICATIONS ·Power amplifier applications ·Recommended for 80W high fi.
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max).
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC3281 |
Toshiba |
Silicon NPN Transistor | |
2 | 2SC3281 |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | 2SC3281 |
INCHANGE |
NPN Transistor | |
4 | 2SC3284 |
Sanken electric |
Silicon NPN Transistor | |
5 | 2SC3284 |
SavantIC |
SILICON POWER TRANSISTOR | |
6 | 2SC3284 |
INCHANGE |
NPN Transistor | |
7 | 2SC3285 |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | 2SC3285 |
INCHANGE |
NPN Transistor | |
9 | 2SC3200 |
Korea Electronics |
SILICON NPN TRANSISTOR | |
10 | 2SC3201 |
Korea Electronics |
SILICON NPN TRANSISTOR | |
11 | 2SC3202 |
Korea Electronics |
SILICON NPN TRANSISTOR | |
12 | 2SC3203 |
Korea Electronics |
SILICON NPN TRANSISTOR |