2SC3265 - Guangdong Kexin Industrial

2SC3265 Silicon NPN Transistor

SMD Type Silicon NPN Epitaxial 2SC3265 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Features High DC current gain: hFE (1) = 100320. Low saturation voltage: VCE (sat) = 0.4 V (max) (IC = 500 mA, IB = 20 mA). +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector .

Features

High DC current gain: hFE (1) = 100320. Low saturation voltage: VCE (sat) = 0.4 V (max) (IC = 500 mA, IB = 20 mA). +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range www.DataSheet4U.com Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 25 5 800 160 200 150 -55 to +150 Unit V V V mA mA mW Electrical Charac.