2SC3265 |
Part Number | 2SC3265 |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | 2SC3265 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3265 Low Frequency Power Amplifier Applications Power Switching Applications • High DC current gain: hFE (1) = 100 to 320 • Low... |
Features |
the
TOSHIBA
2-3F1A
absolute maximum ratings. Please design the appropriate reliability upon reviewing the
Weight: 0.012 g (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter vol... |
Document |
2SC3265 Data Sheet
PDF 170.90KB |
Distributor | Stock | Price | Buy |
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