2SC2671F - Panasonic Semiconductor

2SC2671F Silicon NPN Transistor

Transistor 2SC2671(F) Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm 5.0±0.2 4.0±0.2 q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature *REB (Ta=25˚C) Ratings 15 14 .

Features

0.45
  –0.1 1.27 +0.2 2.3±0.2 1:Base 2:Emitter 3:Collector JEDEC:TO
  –92 EIAJ:SC
  –43A = 1kΩ s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Transition frequency Collector output capacitance Foward transfer gain Maximum unilateral power gain Noise figure (Ta=25˚C) Symbol ICBO IEBO hFE fT
* Cob
* | S21e NF
* |2 GUM
* Conditions VCB = 10V, IE = 0 VEB = 1V, IC = 0 VCE = 8V, IC = 40mA VCE = 8V, IC = 40mA, f = 800MHz VCB = 10V, IE = 0, f = 1MHz VCE = 8V, IC = 40mA, f = 800MHz VCE = 8V, IC = 40mA, f = 800MHz VCE = 8V, IC = 40mA, f = .