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2SC2611 Silicon NPN Triple Diffused Application High voltage amplifier TV VIDEO output Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature S.
or to emitter saturation voltage Gain bandwidth product Collector output capacitance V(BR)EBO I CEO hFE VCE(sat) fT Cob Maximum Collector Dissipation Curve 1.5 Collector power dissipation Pc (W) 1.0 Collector Current IC (mA) Typical Output Characteristics 16 14 12 10 8 0.4 6 4 0.2 2 µA IB = 0 0.8 1.0 0.6 0.5 0 50 100 Ambient Temperature TC (°C) 150 0 0.4 0.8 1.2 1.6 2.0 Collector to emitter Voltage VCE (V) 2 2SC2611 DC Current Transfer Ratio vs. Collector Current 100 DC current transfer ratio hFE Typical Transfer Characteristics 100 Collector Current IC (mA) 50 VCE = 20 V 20 10 5.
2SC2611 - SavantIC
·With TO-126 package ·High breakdown voltage APPLICATIONS ·For high voltage amplifier TV video output applications PINNI.
2SC2611 - INCHANGE
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Minimum.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC2610 |
Hitachi Semiconductor |
Silicon NPN Triple Diffused Transistor |
|
| 2 | 2SC2610 |
Renesas |
Silicon NPN Triple Diffused Transistor |
|
| 3 | 2SC2612 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC2612 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SC2612 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SC2613 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 7 | 2SC2613 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SC2613 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SC2614 |
ETC |
Silicon NPN Triple Diffused Transistor |
|
| 10 | 2SC2615 |
INCHANGE |
NPN Transistor |
|
| 11 | 2SC2615 |
SavantIC |
Silicon NPN Power Transistors |
|
| 12 | 2SC2616 |
INCHANGE |
NPN Transistor |
|
