DATA SHEET SILICON POWER TRANSISTOR 2SC2654 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • Large current capacitance in small dimension: IC(DC) = 7 A • Low collector saturation voltage: VCE(sat) = 0.3 V MAX. (IC = 3.0 A) • Ideal for use in a lamp driver • Complementary transistor: 2SA1129 PACKAGE DRAW.
• Large current capacitance in small dimension: IC(DC) = 7 A
• Low collector saturation voltage:
VCE(sat) = 0.3 V MAX. (IC = 3.0 A)
• Ideal for use in a lamp driver
• Complementary transistor: 2SA1129
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current (DC)
IC(DC)
Collector current (pulse)
IC(pulse)
*
Base current (DC) Total power dissipation Total power dissipation
IB(DC) PT (Tc = 25°C) PT (Ta = 25°C)
Junction temperature
Tj
Storage tem.
TO-220 NPN 。Silicon NPN transistor in a TO-220 Plastic Package. / Features ,, 2SA1129 。 Large current capacity w.
·With TO-220 package ·Complement to type 2SA1129 ·Low collector saturation votage APPLICATIONS ·For low-frequency power .
·High Collector Current:: IC= 7A ·Low Collector Saturation Voltage :VCE(sat)= 0.3(V)(Max)@IC= 3A ·Complement to Type 2SA.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC2650 |
Toshiba |
Silicon NPN Transistor | |
2 | 2SC2650 |
INCHANGE |
Silicon NPN Power Transistor | |
3 | 2SC2652 |
Toshiba |
Silicon NPN Transistor | |
4 | 2SC2653 |
Panasonic |
NPN Transistor | |
5 | 2SC2653H |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
6 | 2SC2653H |
Panasonic |
NPN Transistor | |
7 | 2SC2655 |
Toshiba Semiconductor |
Silicon NPN TRANSISTOR | |
8 | 2SC2655 |
INCHANGE |
NPN Transistor | |
9 | 2SC2655 |
UTC |
NPN SILICON TRANSISTOR | |
10 | 2SC2655 |
SeCoS |
NPN Transistor | |
11 | 2SC2655L |
SeCoS |
NPN Transistor | |
12 | 2SC2656 |
INCHANGE |
NPN Transistor |