2SC2650 SILICON NPN TRIPLE DIFFUSED TYPE SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS. FEATURES • Excellent Switching Tims t r =1.0ys Max. , t f =1.0ys Max. (IC=5A) • High Collector Breakdown Voltage VCEO=400V MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage .
• Excellent Switching Tims t r =1.0ys Max. , t f =1.0ys Max. (IC=5A)
• High Collector Breakdown Voltage VCEO=400V
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current Base Current Collector Power Dissipation
(To=25°C) Junction Temperature Storage Temperature Range
SYMBOL v CBO 'CEO v EBO
PC
r stg
RATING 500 400
10
100 150 -55^150
UNIT V
1. BASE Z COLLECTOR (HEAT SINK) 3. EMITTER
JEDEC EIAJ
TOSHIBA
34 A 1A
ELECTRICAL CHARACTERISTICS CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current Collect or- Ba.
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC2652 |
Toshiba |
Silicon NPN Transistor | |
2 | 2SC2653 |
Panasonic |
NPN Transistor | |
3 | 2SC2653H |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
4 | 2SC2653H |
Panasonic |
NPN Transistor | |
5 | 2SC2654 |
SavantIC |
SILICON POWER TRANSISTOR | |
6 | 2SC2654 |
INCHANGE |
NPN Transistor | |
7 | 2SC2654 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
8 | 2SC2654 |
Renesas |
NPN Transistor | |
9 | 2SC2655 |
Toshiba Semiconductor |
Silicon NPN TRANSISTOR | |
10 | 2SC2655 |
INCHANGE |
NPN Transistor | |
11 | 2SC2655 |
UTC |
NPN SILICON TRANSISTOR | |
12 | 2SC2655 |
SeCoS |
NPN Transistor |