Transistors 2SC2634 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1127 5.0±0.2 Unit: mm 4.0±0.2 5.1±0.2 ■ Features • Low noise voltage NV • High forward current transfer ratio hFE 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.7±0.2 12.9±0.5 / Parameter Symbol Rating Unit e ) Collector-base .
• Low noise voltage NV
• High forward current transfer ratio hFE
0.7±0.1
■ Absolute Maximum Ratings Ta = 25°C
0.7±0.2 12.9±0.5
/ Parameter
Symbol Rating
Unit
e ) Collector-base voltage (Emitter open) VCBO
60
V
c type Collector-emitter voltage (Base open) VCEO
55
V
n d ge. ed Emitter-base voltage (Collector open) VEBO
7
2.3±0.2
V
le sta ntinu Collector current
IC
100
mA
a e cyc isco Peak collector current
ICP
200
mA
life d, d Collector power dissipation
PC
400
mW
n u duct type Junction temperature
Tj
150
°C
te tin Pro ued Storage temperature
Tstg −55 to +150 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC2630 |
Mitsubishi Electric Semiconductor |
NPN TRANSISTOR | |
2 | 2SC2631 |
Panasonic Semiconductor |
Silicon PNP Transistor | |
3 | 2SC2632 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
4 | 2SC2632 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
5 | 2SC2633 |
Panasonic |
Silicon NPN Power Transistor | |
6 | 2SC2636 |
Panasonic Semiconductor |
NPN Transistor | |
7 | 2SC2638 |
Toshiba Semiconductor |
TRANSISTOR | |
8 | 2SC2639 |
Toshiba Semiconductor |
TRANSISTOR | |
9 | 2SC2603 |
Micro Electronics |
NPN SILICON TRANSISTOR | |
10 | 2SC2608 |
INCHANGE |
NPN Transistor | |
11 | 2SC2608 |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | 2SC2610 |
Hitachi Semiconductor |
Silicon NPN Triple Diffused Transistor |