2SC2631 - Panasonic Semiconductor

2SC2631 Silicon PNP Transistor

Transistors 2SC2631 Silicon NPN epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 5.0±0.2 Unit: mm 4.0±0.2 5.1±0.2 ■ Features • Satisfactory linearity of forward current transfer ratio hFE • High collector-emitter voltage (Base open) VCEO • Small collector output capacitance (Common base, input open.

Features

• Satisfactory linearity of forward current transfer ratio hFE
• High collector-emitter voltage (Base open) VCEO
• Small collector output capacitance (Common base, input open cir- 0.7±0.1 cuited) Cob 0.7±0.2 12.9±0.5 /
■ Absolute Maximum Ratings Ta = 25°C e Parameter Symbol Rating Unit c type) Collector-base voltage (Emitter open) VCBO 150 V n d ge. ed Collector-emitter voltage (Base open) VCEO 150 2.3±0.2 V sta tinu Emitter-base voltage (Collector open) VEBO 5 V a e cycle iscon Collector current IC 50 mA life d, d Peak collector current ICP 100 mA n u duct type Co.