2SC2613 - Hitachi Semiconductor

2SC2613 Silicon NPN Transistor

2SC2613 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current Collector power d.

Features

1 I C = 5 A, IB1 =
  –IB2 = 1 A, VCC ≅ 150 V Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO 7 — — 15 7 — — — — — — — — — — — — — 1.2 — — 100 100 — — 1.0 1.5 1.0 2.5 1.0 V µA µA DC current transfer ratio hFE1 hFE2 Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Storage time Fall time Note: 1. Pulse test. VCE(sat) VBE(sat) t on t stg tf Maximum Collector Dissipation Curve 60 Collector power dissipation Pc (W) 100 iC (peak) 10 Area of Safe Operation Collector Current IC (A) µs 25 s s 0µ m s 25 0 m 1 =1 ion at PW .