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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base V.
llector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A ICBO Collector Cutoff Current VCB= 400V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 3A; VCE= 5V Switching Times ton Turn-On Time tstg Storage Time tf Fall Time IC= 1A; IB1= 0.3A; IB2= -0.3A; VCC= 200V; RL= 68Ω MIN TYP. MAX UNIT 500 V 1.0 V 1.5 V 100 μA 1 mA 10 1 μs 2.5 μs 1.0 μs NOTICE： ISC reserves the rights to make changes of the content herein the datasheet.
2SC2535 - SavantIC
·With TO-220C package ·High collector breakdown voltage : VCEO=400V(Min) ·Excellent switching time : tr=1.0µs(Max.) : tf.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC2530 |
Fujitsu |
Silicon High Speed Power Transistors |
|
| 2 | 2SC2531 |
Toshiba |
Silicon NPN Transistor |
|
| 3 | 2SC2532 |
Toshiba Semiconductor |
Silicon NPN Epitaxial Type TRANSISTOR |
|
| 4 | 2SC2534 |
INCHANGE |
NPN Transistor |
|
| 5 | 2SC2534 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SC2538 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
| 7 | 2SC2539 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
| 8 | 2SC2539 |
HG Semiconductors |
HG RF POWER TRANSISTOR |
|
| 9 | 2SC2500 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 10 | 2SC2500 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 11 | 2SC2500 |
JCET |
NPN Transistor |
|
| 12 | 2SC2501 |
INCHANGE |
NPN Transistor |
|