2SC2532 - Toshiba Semiconductor

2SC2532 Silicon NPN Epitaxial Type TRANSISTOR

2SC2532 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2532 Audio Frequency Amplifier Applications Driver Stage for LED Lamp Applications Temperature Compensation Applications Unit: mm • High hFE: hFE (1) = 5000 (min) (IC = 10 mA) hFE (2) = 10000 (min) (IC = 100 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating U.

Features

within the Weight: 0.012 g (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Symbol Test Condition ICBO IEBO hFE (1) hFE (2) VCE (sat) VBE VCB = 40 V, IE = 0 VEB = 8 V, I.