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·With TO-3 package ·High voltage ,high speed ·Wide area of safe operation APPLICATIONS ·High speed switching ·Converters and inverters PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector.
n voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=1A ; RBE=9 IE=1mA ; IC=0 IC=10A; IB=2A IC=10A; IB=2A VCB=450V; IE=0 VEB=6V; IC=0 IC=10A ; VCE=5V IC=2A ; VCE=10V,f=10MHz IE=0 ; VCB=10V;f=1MHz 10 MIN 400 7 2SC2429 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT COB TYP. MAX UNIT V V 0.45 1.2 1.0 2.0 0.1 0.1 V V mA mA 15 35 230 40 MHz pF Switching times tr tstg tf Rise time Storage time Fall time VCC=150V,IC=10A IB1=-IB2=2A 0.15 1.20 0.10 0.5 2.5 0.3 µs µ.
2SC2429 - INCHANGE
·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC2420 |
Toshiba |
Silicon NPN Transistor |
|
| 2 | 2SC2404 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SC2404 |
Kexin |
Silicon PNP Transistor |
|
| 4 | 2SC2404 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 5 | 2SC2405 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SC2405 |
Kexin |
Silicon PNP Transistor |
|
| 7 | 2SC2406 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 8 | 2SC2406 |
Kexin |
Silicon PNP Transistor |
|
| 9 | 2SC2407 |
NEC |
NPN Silicon Transistor |
|
| 10 | 2SC2408 |
Inchange Semiconductor |
Silicon NPN RF Transistor |
|
| 11 | 2SC2411 |
GME |
Silicon Transistor |
|
| 12 | 2SC2411 |
Kexin |
NPN Transistors |
|