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2SC2411 - HOTTECH

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2SC2411 GENERAL PURPOSE TRANSISTOR

REPLACEMENT TYPE : 2SC2411 FEATURES  High ICMax.ICMax.=0.5mA  Low VCE(sat).Optimal For Low Voltage Operation  Complements The HAA1036 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage VCBO 40 Collector-Emitter Voltage VCEO 32 Emitter-Base Voltage VEBO 5 Collector Current-Continuous IC 500 Collec.

Features


 High ICMax.ICMax.=0.5mA
 Low VCE(sat).Optimal For Low Voltage Operation
 Complements The HAA1036 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage VCBO 40 Collector-Emitter Voltage VCEO 32 Emitter-Base Voltage VEBO 5 Collector Current-Continuous IC 500 Collector Power Dissipation PC 200 Junction Temperature TJ 150 Storage Temperature Tstg -55 to +150 Unit V V V mA mW °C °C HAC2411(NPN) GENERAL PURPOSE TRANSISTOR SOT-23 1: BASE 2:EMITTER 3: COLLECTOR ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted) Parameter .

The same part from a different manufacturer

Datasheet 2SC2411 - SeCoS 2SC2411

2SC2411 Elektronische Bauelemente NPN Transistor Plastic-Encapsulate Transistors A suffix of "-C" specifies halogen & .

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SMD Type Transistors NPN Transistors 2SC2411 (2SC2411K) ■ Features ● Collector Current Capability IC=0.5A ● Low VCE(sa.

Datasheet 2SC2411 - GME 2SC2411

Production specification Silicon Epitaxial Planar Transistor FEATURES  Power dissipation: PCM=200Mw.  High ICM(MAX.).

Datasheet 2SC2411 - Galaxy Semi-Conductor 2SC2411

BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES Production specification 2SC2411 Pb z Power dissipa.

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