2SC4102 / 2SC3906K / 2SC2389S Transistors High-voltage Amplifier Transistor (120V, 50mA) 2SC4102 / 2SC3906K / 2SC2389S !Features 1) High breakdown voltage. (BVCEO = 120V) 2) Complements the 2SA1579 / 2SA1514K / 2SA1038S. !External dimensions (Units : mm) 2SC4102 (1) 0.65 0.65 0.7 0.8 0.3 (3) 1.25 0.2 !Absolute maximum ratings (Ta=25°C) 0.15 2.1 Param.
1) High breakdown voltage. (BVCEO = 120V) 2) Complements the 2SA1579 / 2SA1514K / 2SA1038S. !External dimensions (Units : mm) 2SC4102 (1) 0.65 0.65 0.7 0.8 0.3 (3) 1.25 0.2 !Absolute maximum ratings (Ta=25°C) 0.15 2.1 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power 2SC4102 / 2SC3906K dissipation 2SC2389S Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 120 120 5 50 0.2 0.3 150 −55~+150 Unit V V V mA W (2) 0.1Min. 0~0.1 Each lead has same dimensions °C °C ROHM : UMT3 EIAJ : SC-7.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC2389 |
Rohm |
(2SC2389 / 2SC2390) NPN Silicon Transistor | |
2 | 2SC2380 |
Toshiba |
Silicon NPN Transistor | |
3 | 2SC2381 |
Toshiba |
Silicon NPN Transistor | |
4 | 2SC2383 |
Toshiba Semiconductor |
TRANSISTOR | |
5 | 2SC2383 |
INCHANGE |
NPN Transistor | |
6 | 2SC2383 |
Unisonic Technologies |
NPN EPITAXIAL SILICON TRANSISTOR | |
7 | 2SC2383-O |
MCC |
NPN Transistor | |
8 | 2SC2383-R |
MCC |
NPN Transistor | |
9 | 2SC2383-Y |
MCC |
NPN Transistor | |
10 | 2SC2383T |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
11 | 2SC2304 |
INCHANGE |
NPN Transistor | |
12 | 2SC2304 |
SavantIC |
SILICON POWER TRANSISTOR |