Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 80(V)(Min.) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Series regulator,switch and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Em.
; IB= 60mA ICBO Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 0.5A; VCE= 4V fT Current-Gain—Bandwidth Product IE= 100mA; VCE= 12V MIN TYP. MAX UNIT 80 V 1.0 V 0.1 mA 0.1 mA 500 30 MHz NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in eq.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC2310 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SC2310 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 3 | 2SC2310 |
SEMTECH |
NPN Silicon Epitaxial Planar Transistor |
|
| 4 | 2SC2310 |
CHINA BASE |
NPN Silicon Epitaxial Planar Transistor |
|
| 5 | 2SC2312 |
Mitsubishi Electric |
RF POWER TRANSISTOR |
|
| 6 | 2SC2312 |
ELEFLOW TECHNOLOGIES |
Silicon NPN Transistor |
|
| 7 | 2SC2312 |
Mitsubishi Electric |
NPN Silicon Epitaxial Planar Transistor |
|
| 8 | 2SC2312 |
HGSemi |
Silicon NPN POWER TRANSISTOR |
|
| 9 | 2SC2314 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 10 | 2SC2314 |
TGS |
NPN EPITAXIAL PLANAR SILICON TRANSISTORS |
|
| 11 | 2SC2314 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 12 | 2SC2314 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
