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2SC2316 |
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| Part Number | 2SC2316 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 80(V)(Min.) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Series regulator,... |
| Features |
; IB= 60mA
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE
DC Current Gain
IC= 0.5A; VCE= 4V
fT
Current-Gain—Bandwidth Product
IE= 100mA; VCE= 12V
MIN TYP. MAX UNIT
80
V
1.0
V
0.1 mA
0.1 mA
500
30
MHz
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in eq... |
| Document |
 2SC2316 Data Sheet
PDF 181.04KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC2310 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SC2310 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 3 | 2SC2310 |
SEMTECH |
NPN Silicon Epitaxial Planar Transistor |
|
| 4 | 2SC2310 |
CHINA BASE |
NPN Silicon Epitaxial Planar Transistor |
|
| 5 | 2SC2312 |
Mitsubishi Electric |
RF POWER TRANSISTOR |
|