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SILICON NPN PLANAR TYPE TV 1ST, 2ND PICTURE IF AMPLIFIER APPLICATIONS. FEATURES • High Gain : Gpe =35dB (Typ.) (f=45MHz) • Excellent Forward AGC Characteristics. 2SC2215 Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junc.
• High Gain : Gpe =35dB (Typ.) (f=45MHz)
• Excellent Forward AGC Characteristics.
2SC2215
Unit in mm
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VCBO v CEO vEBO ic IE
?C T
J
T stg
RATING 40
UNIT V
40
V
4
V
50
mA
-50
mA
250
mW
125
°C
-55^125 °C
1. BASS 2. EMITTER a COLLECTOR
TO 92
43
2 — 5P IE
Weight : 0.21g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC Collector Cut-off Current
SYMBOL L.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC2210 |
Sanyo Semicon Device |
NPN Transistor |
|
| 2 | 2SC2210 |
Sanyo Semiconductor |
NPN Epitaxial Planar Silicon Transistor |
|
| 3 | 2SC2216 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SC2216 |
LGE |
NPN Transistor |
|
| 5 | 2SC2216 |
Cnelectr |
NPN Transistor |
|
| 6 | 2SC2216 |
WEJ |
NPN Transistor |
|
| 7 | 2SC2216 |
FOSHAN BLUE ROCKET |
SILICON NPN TRANSISTOR |
|
| 8 | 2SC2216 |
Secos |
NPN Transistor |
|
| 9 | 2SC2216 |
ETC |
NPN Transistor |
|
| 10 | 2SC2216 |
MCC |
NPN Transistor |
|
| 11 | 2SC2216 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 12 | 2SC2216M |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|