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·Silicon NPN triple diffused planar transistor ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 300(V)(Min.) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Series regulator,switch and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO C.
(sat) Collector-Emitter Saturation Voltage IC= 1.0A; IB= 200mA ICBO Collector Cutoff Current VCB= 300V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 0.5A; VCE= 4V fT Current-Gain—Bandwidth Product IE= 200mA; VCE= 12V MIN TYP. MAX UNIT 300 V 1.0 V 1 mA 1 mA 30 10 MHz NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equi.
2SC2023 - Sanken electric
2SC2023 Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2.
2SC2023 - SavantIC
·With TO-220C package ·High breakdown voltage APPLICATIONS ·Series regulator, switch, and general purpose applications P.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC2020 |
Sony Corporation |
RP POWER TRANSISTOR |
|
| 2 | 2SC2021 |
Rohm |
General Small Signal Amp. Epitaxial Planar NPN Silicon Transistors |
|
| 3 | 2SC2021L |
Rohm |
NPN Transistor |
|
| 4 | 2SC2021LN |
Rohm |
NPN Transistor |
|
| 5 | 2SC2022 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SC2022 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SC2026 |
NEC |
NPN SILICON TRANSISTOR |
|
| 8 | 2SC2026 |
Inchange |
Silicon NPN RF Transistor |
|
| 9 | 2SC2027 |
INCHANGE |
NPN Transistor |
|
| 10 | 2SC2027 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 11 | 2SC2028 |
INCHANGE |
NPN Transistor |
|
| 12 | 2SC2000 |
NEC |
NPN SILICON TRANSISTOR |
|