·With TO-220C package ·High voltage APPLICATIONS ·Series regulator, switch, and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Col.
tter-base breakdown voltage IE=1mA ; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=500mA; IB=100mA 1.0 V ICBO Collector cut-off current VCB=300V ;IE=0 1.0 mA IEBO Emitter cut-off current VEB=6V; IC=0 1.0 mA hFE DC current gain IC=200m A ; VCE=4V 30 fT Transition frequency IC=100mA ; VCE=12V 10 MHz 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2022 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 .
·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 300(V)(Min.) ·100% avalanche tested ·Minimum Lot-to-Lot variations for .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC2020 |
Sony Corporation |
RP POWER TRANSISTOR | |
2 | 2SC2021 |
Rohm |
General Small Signal Amp. Epitaxial Planar NPN Silicon Transistors | |
3 | 2SC2021L |
Rohm |
NPN Transistor | |
4 | 2SC2021LN |
Rohm |
NPN Transistor | |
5 | 2SC2023 |
Sanken electric |
NPN Transistor | |
6 | 2SC2023 |
INCHANGE |
NPN Transistor | |
7 | 2SC2023 |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | 2SC2026 |
NEC |
NPN SILICON TRANSISTOR | |
9 | 2SC2026 |
Inchange |
Silicon NPN RF Transistor | |
10 | 2SC2027 |
INCHANGE |
NPN Transistor | |
11 | 2SC2027 |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | 2SC2028 |
INCHANGE |
NPN Transistor |