2SC1764 - Toshiba

2SC1764 SILICON NPN TRANSISTOR

SILICON NPN EPITAXIAL PLANAR TYPE 2 -30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. (20V SUPPLY VOLTAGE USE) FEATURES Specified 28V, 28MHz Characteristics Output Power : P o =80Wp Ep Minimum Gain : Gp e=14.5dB Efficiency : ? c=40%(Min. Intermodulation Distortion : IMD=-30dB(Max. Unit in mm MAXIMUM RATI NGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage C.

Features

Specified 28V, 28MHz Characteristics Output Power : P o =80Wp Ep Minimum Gain : Gp e=14.5dB Efficiency : ? c=40%(Min. Intermodulation Distortion : IMD=-30dB(Max. Unit in mm MAXIMUM RATI NGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO Vebo ic PC T j Tstg RATING 65 35 4 12 140 175 -65 -175 UNIT V V V A W °C °c 1. EMITTER 2. BASE 3. EMITTER 4. COLLECTOR TOSHIBA 2-13B1A Weight : 5.2g ELECTRICAL CHARACTERISTICS (Ta=25°C).