2SC1763 - Toshiba

2SC1763 SILICON NPN TRANSISTOR

:) SILICON NPN EPITAXIAL PLANAR TYPE ) 2 -30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. (28V SUPPLY VOLTAGE USE) FEATURES . Specified 28V, 28MHz Characteristics : Output Power : P o =40Wp Ep : Minimum Gain : Gp e =16dB : Efficiency : >7c = 40%(Min. : Intermodulation Distortion : IMD=-30dB(Max. Unit in mm 012.7 ±Q5 ci cS +1 -H MAXIMUM RATINGS (Ta=25°C).

Features

. Specified 28V, 28MHz Characteristics : Output Power : P o =40Wp Ep : Minimum Gain : Gp e =16dB : Efficiency : >7c = 40%(Min. : Intermodulation Distortion : IMD=-30dB(Max. Unit in mm 012.7 ±Q5 ci cS +1 -H MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VcBO v CEO v EBO ic ?C T J T stg RATING 65 35 4 7 80 UNIT V V V A W 175 -65-175 °C °c ' ' ; ; : ! l 18.4±ai5 1f 1. EMITTER 2. BASE a EMITTER 4. COLLECTOR JE.