·With TO-3 package ·High current capacity ·Wide safe oprating area APPLICATIONS ·For audio frequency output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage.
tion voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=100mA; IB=0 IE=1mA; IC=0 IC=4A;IB=0.4 A IC=4A;IB=0.4 A VCB=80V; IE=0 VEB=6V; IC=0 IC=3A ; VCE=4V IC=0.5A ; VCE=12V 20 MIN 60 6 2SC1618 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT TYP. MAX UNIT V V 2.0 2.5 0.1 0.1 180 10 V V mA mA MHz 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1618 Fig.2 Outline dimensions 3 .
·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device perfo.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC1610 |
INCHANGE |
NPN Transistor | |
2 | 2SC1610 |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | 2SC1615 |
Rohm |
NPN Transistor | |
4 | 2SC1617 |
INCHANGE |
NPN Transistor | |
5 | 2SC1617 |
Toshiba |
Silicon NPN Transistor | |
6 | 2SC1617 |
SavantIC |
SILICON POWER TRANSISTOR | |
7 | 2SC1619 |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | 2SC1619 |
INCHANGE |
NPN Transistor | |
9 | 2SC1609 |
INCHANGE |
NPN Transistor | |
10 | 2SC1609 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | 2SC1621 |
NEC |
PNP Transistor | |
12 | 2SC1621 |
Kexin |
NPN Silicon Transistor |