2SC1576 SILICON POWER TRANSISTOR Datasheet

2SC1576 SILICON POWER TRANSISTOR

·With TO-3 package ·High voltage,high speed APPLICATIONS ·For high voltage ,fast switching applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltag.

Features

ge Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=100mA ; IB=0 IE=1mA ; IC=0 IC=5A; IB=0.8A IC=5A; IB=0.8A VCB=450V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=5V 30 MIN 330 7 2SC1576 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO IEBO hFE TYP. MAX UNIT V V 1.5 1.8 0.1 0.1 150 V V mA mA 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1576 Fig.2 Outline dimensions 3 .

The same part from a different manufacturer

2SC1576 - Toshiba

: SILICON NPN TRIPLE DIFFUSED TYPE REGULATOR APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES • High Voltage.

2SC1576 - INCHANGE

·With TO-3 Package ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for .

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2SC1576 - SavantIC