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2SC1576 |
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| Part Number | 2SC1576 |
| Manufacturer | INCHANGE |
| Description | ·With TO-3 Package ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier ... |
| Features |
oltage IC=5A; IB= 0.8A
VBE(sat) Base-Emitter Saturation Voltage
IC=5A; IB= 0.8A
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
hFE
DC Current Gain
IC=1A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 450V ; IE= 0
IEBO
Emitter Cutoff Current
VEB=7V; IC= 0
MIN TYP. MAX UNIT
1.5
V
1.8
V
330
V
7
V
30
150
100 uA
100 uA
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the ap... |
| Document |
 2SC1576 Data Sheet
PDF 174.16KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC1570 |
Mitsubishi |
Dual Transistor |
|
| 2 | 2SC1570 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 3 | 2SC1571 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 4 | 2SC1571L |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 5 | 2SC1573 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|