2SC1472K Silicon NPN Epitaxial Type Transistor Datasheet

2SC1472K Silicon NPN Epitaxial Type Transistor

2SC1472(K) Silicon NPN Epitaxial, Darlington REJ03G0688-0200 (Previous ADE-208-1054) Rev.2.00 Aug.10.2005 Application High gain amplifier Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter.

Features

ut capacitance Turn on time VCE(sat) VBE(sat) fT Cob ton Min 30 — — 2000 3000 3000 — — 50 — — Typ — — — — — — — — — — 60 Max — 100 100 100000 — — 1.5 2.0 — 10 — V V MHz pF ns Unit V nA nA Test conditions IC = 1 mA, RBE = ∞ VCB = 30 V, IE = 0 VEB = 10 V, IC = 0 IC = 10 mA, VCE = 5 V IC = 100 mA, VCE = 5 V (Pulse Test) IC = 400 mA, VCE = 5 V (Pulse Test) IC = 100 mA, IB = 0.1 mA IC = 100 mA, IB = 0.1 mA VCE = 5 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz VCC = 11 V IC = 100 IB1 = 100 mA IB2 =
–IB1 Turn off time Storage time Note: hFE1 hFE2 hFE3 toff tstg — — 800 350 — — ns ns 1. The 2SC14.

The same part from a different manufacturer

2SC1472K - Hitachi Semiconductor

2SC1472(K) Silicon NPN Epitaxial, Darlington Application High gain amplifier Outline TO-92 (1) 3 2 1. Emitter 2. Col.

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2SC1472K - Renesas