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2SC1472(K) Silicon NPN Epitaxial, Darlington Application High gain amplifier Outline TO-92 (1) 3 2 1. Emitter 2. Collector 3. Base 3 2 1 1 2SC1472 (K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temp.
000 — — 50 — —
hFE3
* 1 Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Turn on time VCE(sat) VBE(sat) fT Cob t on
V V MHz pF ns
I C = 100 mA, IB = 0.1 mA I C = 100 mA, IB = 0.1 mA VCE = 5 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz VCC = 11 V I C = 100 IB1 = 100 mA I B2 =
–IB1
Turn off time Storage time Note: hFE1 hFE2 hFE3 A
t off t stg B
— —
800 350
— —
ns ns
1. The 2SC1472(K) is grouped by h FE as follows. 2000 to 100000 5000 to 100000 3000 min 3000 min 10000 min 10000 min
Switching Time Test Circuit D.U.T. 6k 50.
2SC1472 - Renesas
2SC1472(K) Silicon NPN Epitaxial, Darlington REJ03G0688-0200 (Previous ADE-208-1054) Rev.2.00 Aug.10.2005 Application H.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC1470 |
Shindengen Electric |
Power Transistors |
|
| 2 | 2SC1470 |
New Jersey Semi-Conductor |
SILICON NPN POWER TRANSISTOR |
|
| 3 | 2SC1471 |
New Jersey Semi-Conductor |
TO3 Silicon NPN High Voltage Switching Transistor |
|
| 4 | 2SC1472K |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SC1472K |
Renesas |
Silicon NPN Epitaxial Type Transistor |
|
| 6 | 2SC1473 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 7 | 2SC1473 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 8 | 2SC1473A |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 9 | 2SC1473A |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 10 | 2SC1475 |
ETC |
NPN Transistor |
|
| 11 | 2SC1400 |
ETC |
NPN Transistor |
|
| 12 | 2SC1402 |
SavantIC |
SILICON POWER TRANSISTOR |
|