·With TO-220C package ·High breakdown voltage :VCEO=100V ·High current :4A APPLICATIONS ·For power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25? ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collect.
saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=25mA; IB=0 IE=1mA; IC=0 IC=3A;IB=0.3 A IC=3A;IB=0.3 A VCB=100V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=4V IC=0.5A ; VCE=12V IE=0; VCB=10V;f=1MHz 25 100 MIN 100 5 2SC1108 TYP. MAX UNIT V V 1.5 2.0 0.1 0.1 320 10 V V mA mA MHz pF 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors www.DataSheet4U.com PACKAGE OUTLINE 2SC1108 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 .
·Low Collector Saturation Voltage ·High Current 4A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust devi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC1102 |
SavantIC |
SILICON POWER TRANSISTOR | |
2 | 2SC1102 |
INCHANGE |
NPN Transistor | |
3 | 2SC1106 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | 2SC1106 |
INCHANGE |
NPN Transistor | |
5 | 2SC1111 |
SavantIC |
SILICON POWER TRANSISTOR | |
6 | 2SC1111 |
INCHANGE |
NPN Transistor | |
7 | 2SC1112 |
INCHANGE |
NPN Transistor | |
8 | 2SC1113 |
SavantIC |
SILICON POWER TRANSISTOR | |
9 | 2SC1113 |
INCHANGE |
NPN Transistor | |
10 | 2SC1114 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | 2SC1114 |
INCHANGE |
NPN Transistor | |
12 | 2SC1115 |
SavantIC |
SILICON POWER TRANSISTOR |