2SC1106 - SavantIC

2SC1106 SILICON POWER TRANSISTOR

·With TO-3 package ·High power dissipation ·High breakdown voltage APPLICATIONS ·For voltage regulator ,inverter and switching mode power supply applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=? ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base v.

Features

50 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 350 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.3A 5.0 V VBEsat Base-emitter saturation voltage IC=1.5A; IB=0.3A 1.5 V ICBO Collector cut-off current VCB=350V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=0.2A ; VCE=5V 30 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors www.DataSheet4U.com PACKAGE OUTLINE 2SC1106 Fig.2 outline dimensions (unindicated tolera.