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·With TO-3 Package ·High breakdown voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Silicon NPN high frequency,high power transistors in a plastic envelope,primarily for use in audio and general purpose ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Col.
tage IC= 0.5A; IB= 100mA V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 hFE DC Current Gain IC= 0.3A; VCE= 5V MIN TYP. MAX UNIT 2.0 V 250 V 5 V 30 200 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized q.
2SC1050 - SavantIC
With TO-3 package High breakdown voltage APPLICATIONS For use in audio and general purpose applications PINNING (See Fig.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC1051 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | 2SC1051 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SC1000 |
Toshiba |
Silicon NPN Transistor |
|
| 4 | 2SC1000 |
ETC |
Silicon NPN Transistor |
|
| 5 | 2SC1001 |
Toshiba |
SILICON NPN TRANSISTOR |
|
| 6 | 2SC1002 |
SavantIC |
Silicon NPN Power Transistors |
|
| 7 | 2SC1004 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SC1004 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SC1008 |
INCHANGE |
NPN Transistor |
|
| 10 | 2SC1008 |
TRANSYS Electronics Limited |
Transistors |
|
| 11 | 2SC1008 |
Weitron |
NPN Transistor |
|
| 12 | 2SC1008 |
SeCoS |
NPN Transistor |
|