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2SC1050 |
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| Part Number | 2SC1050 |
| Manufacturer | INCHANGE |
| Description | ·With TO-3 Package ·High breakdown voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Silicon NPN high frequency,high pow... |
| Features |
tage IC= 0.5A; IB= 100mA
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
hFE
DC Current Gain
IC= 0.3A; VCE= 5V
MIN TYP. MAX UNIT
2.0
V
250
V
5
V
30
200
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized q... |
| Document |
 2SC1050 Data Sheet
PDF 172.83KB |
| Distributor | Stock | Price | Buy |
|---|
