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Transistors 2SC1047 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 5.0±0.2 4.0±0.2 ■ Features 5.1±0.2 • Optimum for RF amplification of FM/AM radios • High transition frequency fT 0.7±0.2 12.9±0.5 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit / Collector-base voltage (Emitter open) VCBO .
5.1±0.2
• Optimum for RF amplification of FM/AM radios
• High transition frequency fT
0.7±0.2 12.9±0.5
0.7±0.1
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
/ Collector-base voltage (Emitter open) VCBO
30
V
e Collector-emitter voltage (Base open) VCEO
20
V
c type) Emitter-base voltage (Collector open) VEBO
3
V
n d ge. ed Collector current
IC
20
mA
2.3±0.2
le sta ntinu Collector power dissipation
PC
400
mW
a e cyc isco Junction temperature
Tj
150
°C
life d, d Storage temperature
Tstg −55 to +150 °C
0.45+
–00..115 2.5+
–00..26
2.5+
–00..26
0.4.
2SC1047 - Wing Shing Computer Components
Silicon Epitaxial Planar Transistor High frequency, high power transistors in a plastic envelope, primarily for use in.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC1044 |
Renesas |
NPN Transistor |
|
| 2 | 2SC1046 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SC1046 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC1000 |
Toshiba |
Silicon NPN Transistor |
|
| 5 | 2SC1000 |
ETC |
Silicon NPN Transistor |
|
| 6 | 2SC1001 |
Toshiba |
SILICON NPN TRANSISTOR |
|
| 7 | 2SC1002 |
SavantIC |
Silicon NPN Power Transistors |
|
| 8 | 2SC1004 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SC1004 |
INCHANGE |
NPN Transistor |
|
| 10 | 2SC1008 |
INCHANGE |
NPN Transistor |
|
| 11 | 2SC1008 |
TRANSYS Electronics Limited |
Transistors |
|
| 12 | 2SC1008 |
Weitron |
NPN Transistor |
|
